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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering.


ABSTRACT: It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50?nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

SUBMITTER: Wiesner M 

PROVIDER: S-EPMC5703879 | BioStudies | 2017-01-01T00:00:00Z

REPOSITORIES: biostudies

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