biostudies-literatureKo TSNational Science and Technology Council of Taiwan3054https://www.ebi.ac.uk/biostudies/studies/S-EPMC10143599biostudies-literatureUnknown16(8)In the application of WS₂ as a surface-enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS₂ and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS₂ (2-3 layers) on GaN and sapphire substrates with different bandgap characteristics to form heterojunctions using a chemical vapor deposition. Compared with sapphire, we found that using GaN as a substrate for WS₂ can effectively enhance the SERS signal, with an enhancement factor of 6.45 × 10⁴ and a limit of detection of 5 × 10^-6 M for probe molecule Rhodamine 6G according to SERS measurement. Analysis of Raman, Raman mapping, atomic force microscopy, and SERS mechanism revealed that The SEMaterials (Basel, Switzerland)The Role of GaN in the Heterostructure WS₂/GaN for SERS Applications.PMC10143599111-2221-E-018-016Lin ETKo TSDeng CAHo YTfalseThe Role of GaN in the Heterostructure WS₂/GaN for SERS Applications.In the application of WS₂ as a surface-enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS₂ and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS₂ (2-3 layers) on GaN and sapphire substrates with different bandgap characteristics to form heterojunctions using a chemical vapor deposition. Compared with sapphire, we found that using GaN as a substrate for WS₂ can effectively enhance the SERS signal, with an enhancement factor of 6.45 × 10⁴ and a limit of detection of 5 × 10^-6 M for probe molecule Rhodamine 6G according to SERS measurement. Analysis of Raman, Raman mapping, atomic force microscopy, and SERS mechanism revealed that The SE2023-01-01T00:00:00Z2023 Apr2025-04-21T17:25:06.115Z2025-04-05T16:40:48.812ZS-EPMC101435993710988910.3390/ma16083054