{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Jiang N"],"funding":["European Research Council"],"pagination":["2610-2620"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10153487"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["5(9)"],"pubmed_abstract":["Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on <i>c</i>-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-pola"],"journal":["Nanoscale advances"],"pubmed_title":["Complications in silane-assisted GaN nanowire growth."],"pmcid":["PMC10153487"],"funding_grant_id":["716471"],"pubmed_authors":["Loeto K","Ghosh S","Oliver RA","Fairclough SM","Kusch G","Frentrup M","Joyce HJ","Jiang N"],"additional_accession":[]},"is_claimable":false,"name":"Complications in silane-assisted GaN nanowire growth.","description":"Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on <i>c</i>-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-pola","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 May","modification":"2025-04-27T03:14:42.073Z","creation":"2025-04-06T18:49:06.424Z"},"accession":"S-EPMC10153487","cross_references":{"pubmed":["37143793"],"doi":["10.1039/d2na00939k"]}}