<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Jiang N</submitter><funding>European Research Council</funding><pagination>2610-2620</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10153487</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>5(9)</volume><pubmed_abstract>Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on &lt;i>c&lt;/i>-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-pola</pubmed_abstract><journal>Nanoscale advances</journal><pubmed_title>Complications in silane-assisted GaN nanowire growth.</pubmed_title><pmcid>PMC10153487</pmcid><funding_grant_id>716471</funding_grant_id><pubmed_authors>Loeto K</pubmed_authors><pubmed_authors>Ghosh S</pubmed_authors><pubmed_authors>Oliver RA</pubmed_authors><pubmed_authors>Fairclough SM</pubmed_authors><pubmed_authors>Kusch G</pubmed_authors><pubmed_authors>Frentrup M</pubmed_authors><pubmed_authors>Joyce HJ</pubmed_authors><pubmed_authors>Jiang N</pubmed_authors></additional><is_claimable>false</is_claimable><name>Complications in silane-assisted GaN nanowire growth.</name><description>Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on &lt;i>c&lt;/i>-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-pola</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 May</publication><modification>2025-04-27T03:14:42.073Z</modification><creation>2025-04-06T18:49:06.424Z</creation></dates><accession>S-EPMC10153487</accession><cross_references><pubmed>37143793</pubmed><doi>10.1039/d2na00939k</doi></cross_references></HashMap>