biostudies-literatureGrezes CEC | EU Framework Programme for Research and Innovation H2020 | H2020 Priority Excellent Science | H2020 Marie Skłodowska-Curie Actions (H2020 Excellent Science - Marie Skłodowska-Curie Actions)Agence Nationale de la Recherche (French National Research Agency)2590https://www.ebi.ac.uk/biostudies/studies/S-EPMC10162979biostudies-literatureUnknown14(1)Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electNature communicationsNon-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.PMC10162979ANR-20-CE24-0023ANR-17-CE24-0026-03955671Arche LMVAttane JPKandazoglou ASgarro PAuffret SBibes MGrezes CGarello KNoel PCosset-Cheneau MVila LfalseNon-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate elect2023-01-01T00:00:00Z2023 May2025-04-18T15:14:09.213Z2025-04-07T01:47:28.497ZS-EPMC101629793714731510.1038/s41467-023-37866-2