{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Lv S"],"funding":["NSFC","Natural Science Foundation of Shandong Province","National Natural Science Foundation of China","Shenzhen Science and Technology Program","Major Basic and Applied Basic Research Projects of Guangdong Province","Natural Science Foundation of Jiangsu Province"],"pagination":["e2300780"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10214239"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["10(15)"],"pubmed_abstract":["Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO<sub>2</sub>  ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO<sub>2</sub> with massive active sites. The GaN/NiCoO<sub>2</sub> heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm<sup>-2</sup"],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Gallium Nitride Based Electrode for High-Temperature Supercapacitors."],"pmcid":["PMC10214239"],"funding_grant_id":["ZR2021MB034","BK20210115","JCYJ20210324141607019","2021A1515110559","52002226","ZR2020QE064","52202265"],"pubmed_authors":["Liang C","Wang S","Lv S","Wang G","Zhong Y","Zhang L","Yu J","Xu X","Li L","Xie S"],"additional_accession":[]},"is_claimable":false,"name":"Gallium Nitride Based Electrode for High-Temperature Supercapacitors.","description":"Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO<sub>2</sub>  ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO<sub>2</sub> with massive active sites. The GaN/NiCoO<sub>2</sub> heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm<sup>-2</sup","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 May","modification":"2025-04-22T12:03:40.758Z","creation":"2025-04-06T00:09:20.207Z"},"accession":"S-EPMC10214239","cross_references":{"pubmed":["36965081"],"doi":["10.1002/advs.202300780"]}}