<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Lv S</submitter><funding>NSFC</funding><funding>Natural Science Foundation of Shandong Province</funding><funding>National Natural Science Foundation of China</funding><funding>Shenzhen Science and Technology Program</funding><funding>Major Basic and Applied Basic Research Projects of Guangdong Province</funding><funding>Natural Science Foundation of Jiangsu Province</funding><pagination>e2300780</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10214239</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>10(15)</volume><pubmed_abstract>Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO&lt;sub>2&lt;/sub>  ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO&lt;sub>2&lt;/sub> with massive active sites. The GaN/NiCoO&lt;sub>2&lt;/sub> heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm&lt;sup>-2&lt;/sup</pubmed_abstract><journal>Advanced science (Weinheim, Baden-Wurttemberg, Germany)</journal><pubmed_title>Gallium Nitride Based Electrode for High-Temperature Supercapacitors.</pubmed_title><pmcid>PMC10214239</pmcid><funding_grant_id>ZR2021MB034</funding_grant_id><funding_grant_id>BK20210115</funding_grant_id><funding_grant_id>JCYJ20210324141607019</funding_grant_id><funding_grant_id>2021A1515110559</funding_grant_id><funding_grant_id>52002226</funding_grant_id><funding_grant_id>ZR2020QE064</funding_grant_id><funding_grant_id>52202265</funding_grant_id><pubmed_authors>Liang C</pubmed_authors><pubmed_authors>Wang S</pubmed_authors><pubmed_authors>Lv S</pubmed_authors><pubmed_authors>Wang G</pubmed_authors><pubmed_authors>Zhong Y</pubmed_authors><pubmed_authors>Zhang L</pubmed_authors><pubmed_authors>Yu J</pubmed_authors><pubmed_authors>Xu X</pubmed_authors><pubmed_authors>Li L</pubmed_authors><pubmed_authors>Xie S</pubmed_authors></additional><is_claimable>false</is_claimable><name>Gallium Nitride Based Electrode for High-Temperature Supercapacitors.</name><description>Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO&lt;sub>2&lt;/sub>  ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO&lt;sub>2&lt;/sub> with massive active sites. The GaN/NiCoO&lt;sub>2&lt;/sub> heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm&lt;sup>-2&lt;/sup</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 May</publication><modification>2025-04-22T12:03:40.758Z</modification><creation>2025-04-06T00:09:20.207Z</creation></dates><accession>S-EPMC10214239</accession><cross_references><pubmed>36965081</pubmed><doi>10.1002/advs.202300780</doi></cross_references></HashMap>