{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhu H"],"funding":["U.S. Department of Energy","United States Department of Defense | United States Navy | Office of Naval Research","United States Department of Defense | Defense Advanced Research Projects Agency (DARPA)","U.S. Department of Energy (DOE)","United States Department of Defense | Defense Advanced Research Projects Agency","United States Department of Defense | United States Navy | Office of Naval Research (ONR)"],"pagination":["3300"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10244423"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["14(1)"],"pubmed_abstract":["To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb<sub>0.55</sub>Ta<sub>0.40</sub>Ti<sub>0.05</sub>FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 µW cm<sup>-1</sup> K<sup>-2</sup>, approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of ~0.86 among hH in the temperature range of 300-873 K. The use of this material led to a 210% enhancement in cooling power density compared to Bi<sub>2</sub>Te<sub>3</sub>-based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications."],"journal":["Nature communications"],"pubmed_title":["Half-Heusler alloys as emerging high power density thermoelectric cooling materials."],"pmcid":["PMC10244423"],"funding_grant_id":["N00014-20-1-2602","NETS","DE-SC0021118"],"pubmed_authors":["Li W","Liu N","Zhang Y","Priya S","Zhu H","Poudel B","Nozariasbmarz A"],"additional_accession":[]},"is_claimable":false,"name":"Half-Heusler alloys as emerging high power density thermoelectric cooling materials.","description":"To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb<sub>0.55</sub>Ta<sub>0.40</sub>Ti<sub>0.05</sub>FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 µW cm<sup>-1</sup> K<sup>-2</sup>, approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of ~0.86 among hH in the temperature range of 300-873 K. The use of this material led to a 210% enhancement in cooling power density compared to Bi<sub>2</sub>Te<sub>3</sub>-based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Jun","modification":"2025-04-19T08:10:46.368Z","creation":"2025-04-19T08:10:46.368Z"},"accession":"S-EPMC10244423","cross_references":{"pubmed":["37280195"],"doi":["10.1038/s41467-023-38446-0"]}}