<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Chen C</submitter><funding>U.S. Department of Energy</funding><funding>U.S. Department of Energy (DOE)</funding><funding>DOE | SC | Basic Energy Sciences (BES)</funding><funding>National Science Foundation (NSF)</funding><funding>DOE | SC | Basic Energy Sciences</funding><funding>National Science Foundation</funding><pagination>7512</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10657405</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>14(1)</volume><pubmed_abstract>During a band-gap-tuned semimetal-to-semiconductor transition, Coulomb attraction between electrons and holes can cause spontaneously formed excitons near the zero-band-gap point, or the Lifshitz transition point. This has become an important route to realize bulk excitonic insulators - an insulating ground state distinct from single-particle band insulators. How this route manifests from weak to strong coupling is not clear. In this work, using angle-resolved photoemission spectroscopy (ARPES) and high-resolution synchrotron x-ray diffraction (XRD), we investigate the broken symmetry state across the semimetal-to-semiconductor transition in a leading bulk excitonic insulator candidate system Ta&lt;sub>2&lt;/sub>Ni(Se,S)&lt;sub>5&lt;/sub>. A broken symmetry phase is found to be continuously suppressed</pubmed_abstract><journal>Nature communications</journal><pubmed_title>Anomalous excitonic phase diagram in band-gap-tuned Ta&lt;sub>2&lt;/sub>Ni(Se,S)&lt;sub>5&lt;/sub>.</pubmed_title><pmcid>PMC10657405</pmcid><funding_grant_id>DE-AC02-05-CH11231</funding_grant_id><funding_grant_id>DMR-2239171</funding_grant_id><funding_grant_id>DE-SC0022874</funding_grant_id><pubmed_authors>Rotenberg E</pubmed_authors><pubmed_authors>da Silva Neto EH</pubmed_authors><pubmed_authors>Birgeneau RJ</pubmed_authors><pubmed_authors>Chen C</pubmed_authors><pubmed_authors>Kang Z</pubmed_authors><pubmed_authors>Louie SG</pubmed_authors><pubmed_authors>Scott K</pubmed_authors><pubmed_authors>Li Z</pubmed_authors><pubmed_authors>Ruff JPC</pubmed_authors><pubmed_authors>He Y</pubmed_authors><pubmed_authors>Ding S</pubmed_authors><pubmed_authors>Bostwick A</pubmed_authors><pubmed_authors>Wang S</pubmed_authors><pubmed_authors>Hashimoto M</pubmed_authors><pubmed_authors>Chen Y</pubmed_authors><pubmed_authors>Chen X</pubmed_authors><pubmed_authors>Tang W</pubmed_authors><pubmed_authors>Jozwiak C</pubmed_authors><pubmed_authors>Wang Y</pubmed_authors><pubmed_authors>Lu DH</pubmed_authors></additional><is_claimable>false</is_claimable><name>Anomalous excitonic phase diagram in band-gap-tuned Ta&lt;sub>2&lt;/sub>Ni(Se,S)&lt;sub>5&lt;/sub>.</name><description>During a band-gap-tuned semimetal-to-semiconductor transition, Coulomb attraction between electrons and holes can cause spontaneously formed excitons near the zero-band-gap point, or the Lifshitz transition point. This has become an important route to realize bulk excitonic insulators - an insulating ground state distinct from single-particle band insulators. How this route manifests from weak to strong coupling is not clear. In this work, using angle-resolved photoemission spectroscopy (ARPES) and high-resolution synchrotron x-ray diffraction (XRD), we investigate the broken symmetry state across the semimetal-to-semiconductor transition in a leading bulk excitonic insulator candidate system Ta&lt;sub>2&lt;/sub>Ni(Se,S)&lt;sub>5&lt;/sub>. A broken symmetry phase is found to be continuously suppressed</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 Nov</publication><modification>2025-04-22T09:27:43.992Z</modification><creation>2025-04-05T23:04:31.541Z</creation></dates><accession>S-EPMC10657405</accession><cross_references><pubmed>37980419</pubmed><doi>10.1038/s41467-023-43365-1</doi></cross_references></HashMap>