{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Maguire JR"],"funding":["UK Research and Innovation","Engineering and Physical Sciences Research Council"],"pagination":["10360-10366"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10683062"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["23(22)"],"pubmed_abstract":["We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that <i>in-operando</i> potential profiles and extracted electric fields, associated with <i>p-n</i> junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor <i>p-n</i> junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between <i>p</i> and <i>n</i> regions, at the core of conventional <i>p-n</i> junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do."],"journal":["Nano letters"],"pubmed_title":["Ferroelectric Domain Wall p-n Junctions."],"pmcid":["PMC10683062"],"funding_grant_id":["EP/P02453X/1","MR/T043172/1"],"pubmed_authors":["Suna A","Maguire JR","McQuaid RGP","Gregg JM","Holsgrove KM","Kumar A","McCluskey CJ"],"additional_accession":[]},"is_claimable":false,"name":"Ferroelectric Domain Wall p-n Junctions.","description":"We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that <i>in-operando</i> potential profiles and extracted electric fields, associated with <i>p-n</i> junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor <i>p-n</i> junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between <i>p</i> and <i>n</i> regions, at the core of conventional <i>p-n</i> junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Nov","modification":"2025-04-18T13:12:18.207Z","creation":"2025-04-06T22:44:09.554Z"},"accession":"S-EPMC10683062","cross_references":{"pubmed":["37947380"],"doi":["10.1021/acs.nanolett.3c02966"]}}