{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Raffaelle PR"],"funding":["Sandia National Laboratories","Division of Civil, Mechanical and Manufacturing Innovation"],"pagination":["55139-55149"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10694808"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(47)"],"pubmed_abstract":["The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al<sub>2</sub>O<sub>3</sub>). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using <i>N</i>-chlorosuccinimide (<i>N</i>CS), <i>N</i>-bromosuccinimide (NBS), and <i>N</i>-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO<sub>2</sub>) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments."],"journal":["ACS applied materials & interfaces"],"pubmed_title":["Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using <i>N</i>-Halogen-succinimides."],"pmcid":["PMC10694808"],"funding_grant_id":["2225896","DE-NA-0003525"],"pubmed_authors":["Raffaelle PR","Shestopalov AA","Wang GT"],"additional_accession":[]},"is_claimable":false,"name":"Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using <i>N</i>-Halogen-succinimides.","description":"The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al<sub>2</sub>O<sub>3</sub>). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using <i>N</i>-chlorosuccinimide (<i>N</i>CS), <i>N</i>-bromosuccinimide (NBS), and <i>N</i>-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO<sub>2</sub>) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Nov","modification":"2026-06-03T08:06:26.976Z","creation":"2026-04-26T03:11:21.703Z"},"accession":"S-EPMC10694808","cross_references":{"pubmed":["37965814"],"doi":["10.1021/acsami.3c13269"]}}