{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["9(49)"],"submitter":["Wang S"],"pubmed_abstract":["Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10<sup>4</sup>, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga<sub>2</sub>"],"journal":["Science advances"],"pagination":["eadj4656"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10699771"],"repository":["biostudies-literature"],"pubmed_title":["Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction."],"pmcid":["PMC10699771"],"pubmed_authors":["Han L","Li ZQ","Guo X","Hu W","Sun Y","Li L","Zou Y","Gao P","He ZH","Huang Y","Wang S","Zhao Q","Zheng L","Liu B","Chen X","Wang Z","Hu YX"],"additional_accession":[]},"is_claimable":false,"name":"Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction.","description":"Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10<sup>4</sup>, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga<sub>2</sub>","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Dec","modification":"2025-04-04T08:32:02.752Z","creation":"2025-04-04T08:32:02.752Z"},"accession":"S-EPMC10699771","cross_references":{"pubmed":["38055810"],"doi":["10.1126/sciadv.adj4656"]}}