<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>9(49)</volume><submitter>Wang S</submitter><pubmed_abstract>Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10&lt;sup>4&lt;/sup>, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga&lt;sub>2&lt;/sub></pubmed_abstract><journal>Science advances</journal><pagination>eadj4656</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10699771</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction.</pubmed_title><pmcid>PMC10699771</pmcid><pubmed_authors>Han L</pubmed_authors><pubmed_authors>Li ZQ</pubmed_authors><pubmed_authors>Guo X</pubmed_authors><pubmed_authors>Hu W</pubmed_authors><pubmed_authors>Sun Y</pubmed_authors><pubmed_authors>Li L</pubmed_authors><pubmed_authors>Zou Y</pubmed_authors><pubmed_authors>Gao P</pubmed_authors><pubmed_authors>He ZH</pubmed_authors><pubmed_authors>Huang Y</pubmed_authors><pubmed_authors>Wang S</pubmed_authors><pubmed_authors>Zhao Q</pubmed_authors><pubmed_authors>Zheng L</pubmed_authors><pubmed_authors>Liu B</pubmed_authors><pubmed_authors>Chen X</pubmed_authors><pubmed_authors>Wang Z</pubmed_authors><pubmed_authors>Hu YX</pubmed_authors></additional><is_claimable>false</is_claimable><name>Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction.</name><description>Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10&lt;sup>4&lt;/sup>, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga&lt;sub>2&lt;/sub></description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 Dec</publication><modification>2025-04-04T08:32:02.752Z</modification><creation>2025-04-04T08:32:02.752Z</creation></dates><accession>S-EPMC10699771</accession><cross_references><pubmed>38055810</pubmed><doi>10.1126/sciadv.adj4656</doi></cross_references></HashMap>