{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["15(1)"],"submitter":["Yuan LD"],"pubmed_abstract":["Germanium (Ge) is an attractive material for Silicon (Si) compatible optoelectronics, but the nature of its indirect bandgap renders it an inefficient light emitter. Drawing inspiration from the significant expansion of Ge volume upon lithiation as a Lithium (Li) ion battery anode, here, we propose incorporating Li atoms into the Ge to cause lattice expansion to achieve the desired tensile strain for a transition from an indirect to a direct bandgap. Our first-principles calculations show that a minimal amount of 3 at.% Li can convert Ge from an indirect to a direct bandgap to possess a dipole transition matrix element comparable to that of typical direct bandgap semiconductors. To enhance compatibility with Si Complementary-Metal-Oxide-Semiconductors (CMOS) technology, we additionally sug"],"journal":["Nature communications"],"pagination":["618"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10799082"],"repository":["biostudies-literature"],"pubmed_title":["Direct bandgap emission from strain-doped germanium."],"pmcid":["PMC10799082"],"pubmed_authors":["Luo JW","Yuan LD","Li SS"],"additional_accession":[]},"is_claimable":false,"name":"Direct bandgap emission from strain-doped germanium.","description":"Germanium (Ge) is an attractive material for Silicon (Si) compatible optoelectronics, but the nature of its indirect bandgap renders it an inefficient light emitter. Drawing inspiration from the significant expansion of Ge volume upon lithiation as a Lithium (Li) ion battery anode, here, we propose incorporating Li atoms into the Ge to cause lattice expansion to achieve the desired tensile strain for a transition from an indirect to a direct bandgap. Our first-principles calculations show that a minimal amount of 3 at.% Li can convert Ge from an indirect to a direct bandgap to possess a dipole transition matrix element comparable to that of typical direct bandgap semiconductors. To enhance compatibility with Si Complementary-Metal-Oxide-Semiconductors (CMOS) technology, we additionally sug","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Jan","modification":"2025-04-04T19:22:19.312Z","creation":"2025-04-04T19:22:19.312Z"},"accession":"S-EPMC10799082","cross_references":{"pubmed":["38242877"],"doi":["10.1038/s41467-024-44916-w"]}}