{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Okello OFN"],"funding":["Institute for Basic Science","Korea Basic Science Institute","Ministry of Science and ICT, South Korea"],"pagination":["6927-6935"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10919086"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["18(9)"],"pubmed_abstract":["Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe<sub>2</sub> monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe<sub>2</sub> samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe<sub>2,</sub> respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe<sub>2</sub> monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality."],"journal":["ACS nano"],"pubmed_title":["Atomistic Probing of Defect-Engineered 2H-MoTe<sub>2</sub> Monolayers."],"pmcid":["PMC10919086"],"funding_grant_id":["IBS-R034-D1","2022R1A2C2091160","2020R1A6C101A202 and 2021R1A6C103B434"],"pubmed_authors":["Choi SY","Shin D","Jo MH","Park J","Chu YS","Mizoguchi T","Yang DH","Seo SY","Moon G","Yang S","Okello OFN"],"additional_accession":[]},"is_claimable":false,"name":"Atomistic Probing of Defect-Engineered 2H-MoTe<sub>2</sub> Monolayers.","description":"Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe<sub>2</sub> monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe<sub>2</sub> samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe<sub>2,</sub> respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe<sub>2</sub> monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Mar","modification":"2025-04-04T12:34:48.647Z","creation":"2025-04-04T12:34:48.647Z"},"accession":"S-EPMC10919086","cross_references":{"pubmed":["38374663"],"doi":["10.1021/acsnano.3c08606"]}}