biostudies-literatureOkello OFNInstitute for Basic ScienceKorea Basic Science InstituteMinistry of Science and ICT, South Korea6927-6935https://www.ebi.ac.uk/biostudies/studies/S-EPMC10919086biostudies-literatureUnknown18(9)Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe₂ monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe₂ samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe_2, respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe₂ monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.ACS nanoAtomistic Probing of Defect-Engineered 2H-MoTe₂ Monolayers.PMC10919086IBS-R034-D12022R1A2C20911602020R1A6C101A202 and 2021R1A6C103B434Choi SYShin DJo MHPark JChu YSMizoguchi TYang DHSeo SYMoon GYang SOkello OFNfalseAtomistic Probing of Defect-Engineered 2H-MoTe₂ Monolayers.Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe₂ monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe₂ samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe_2, respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe₂ monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.2024-01-01T00:00:00Z2024 Mar2025-04-04T12:34:48.647Z2025-04-04T12:34:48.647ZS-EPMC109190863837466310.1021/acsnano.3c08606