{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["10(12)"],"submitter":["Cheng X"],"pubmed_abstract":["Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by \"head-to-head\" comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)-based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a \"90-nm\" node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics."],"journal":["Science advances"],"pagination":["eadl1636"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10959407"],"repository":["biostudies-literature"],"pubmed_title":["Aligned carbon nanotube-based electronics on glass wafer."],"pmcid":["PMC10959407"],"pubmed_authors":["Wu Z","Pan Z","Peng LM","Cheng X","Fan C","Ding L"],"additional_accession":[]},"is_claimable":false,"name":"Aligned carbon nanotube-based electronics on glass wafer.","description":"Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by \"head-to-head\" comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)-based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a \"90-nm\" node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics.","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Mar","modification":"2025-04-22T13:01:22.747Z","creation":"2025-04-06T00:28:04.602Z"},"accession":"S-EPMC10959407","cross_references":{"pubmed":["38517964"],"doi":["10.1126/sciadv.adl1636"]}}