<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>10(12)</volume><submitter>Cheng X</submitter><pubmed_abstract>Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by "head-to-head" comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)-based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a "90-nm" node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics.</pubmed_abstract><journal>Science advances</journal><pagination>eadl1636</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10959407</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Aligned carbon nanotube-based electronics on glass wafer.</pubmed_title><pmcid>PMC10959407</pmcid><pubmed_authors>Wu Z</pubmed_authors><pubmed_authors>Pan Z</pubmed_authors><pubmed_authors>Peng LM</pubmed_authors><pubmed_authors>Cheng X</pubmed_authors><pubmed_authors>Fan C</pubmed_authors><pubmed_authors>Ding L</pubmed_authors></additional><is_claimable>false</is_claimable><name>Aligned carbon nanotube-based electronics on glass wafer.</name><description>Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by "head-to-head" comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)-based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a "90-nm" node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics.</description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 Mar</publication><modification>2025-04-22T13:01:22.747Z</modification><creation>2025-04-06T00:28:04.602Z</creation></dates><accession>S-EPMC10959407</accession><cross_references><pubmed>38517964</pubmed><doi>10.1126/sciadv.adl1636</doi></cross_references></HashMap>