<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>10(12)</volume><submitter>Uguz I</submitter><pubmed_abstract>The ability to amplify, translate, and process small ionic potential fluctuations of neural processes directly at the recording site is essential to improve the performance of neural implants. Organic front-end analog electronics are ideal for this application, allowing for minimally invasive amplifiers owing to their tissue-like mechanical properties. Here, we demonstrate fully organic complementary circuits by pairing depletion- and enhancement-mode p- and n-type organic electrochemical transistors (OECTs). With precise geometry tuning and a vertical device architecture, we achieve overlapping output characteristics and integrate them into amplifiers with single neuronal dimensions (20 micrometers). Amplifiers with combined p- and n-OECTs result in voltage-to-voltage amplification with a gain of >30 decibels. We also leverage depletion and enhancement-mode p-OECTs with matching characteristics to demonstrate a differential recording capability with high common mode rejection rate (>60 decibels). Integrating OECT-based front-end amplifiers into a flexible shank form factor enables single-neuron recording in the mouse cortex with on-site filtering and amplification.</pubmed_abstract><journal>Science advances</journal><pagination>eadi9710</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC10959418</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Complementary integration of organic electrochemical transistors for front-end amplifier circuits of flexible neural implants.</pubmed_title><pmcid>PMC10959418</pmcid><pubmed_authors>Sheelamanthula R</pubmed_authors><pubmed_authors>Fabbri JD</pubmed_authors><pubmed_authors>Shepard KL</pubmed_authors><pubmed_authors>Griggs S</pubmed_authors><pubmed_authors>Ohayon D</pubmed_authors><pubmed_authors>Yilmaz S</pubmed_authors><pubmed_authors>Uguz I</pubmed_authors><pubmed_authors>Inal S</pubmed_authors><pubmed_authors>McCulloch I</pubmed_authors></additional><is_claimable>false</is_claimable><name>Complementary integration of organic electrochemical transistors for front-end amplifier circuits of flexible neural implants.</name><description>The ability to amplify, translate, and process small ionic potential fluctuations of neural processes directly at the recording site is essential to improve the performance of neural implants. Organic front-end analog electronics are ideal for this application, allowing for minimally invasive amplifiers owing to their tissue-like mechanical properties. Here, we demonstrate fully organic complementary circuits by pairing depletion- and enhancement-mode p- and n-type organic electrochemical transistors (OECTs). With precise geometry tuning and a vertical device architecture, we achieve overlapping output characteristics and integrate them into amplifiers with single neuronal dimensions (20 micrometers). Amplifiers with combined p- and n-OECTs result in voltage-to-voltage amplification with a gain of >30 decibels. We also leverage depletion and enhancement-mode p-OECTs with matching characteristics to demonstrate a differential recording capability with high common mode rejection rate (>60 decibels). Integrating OECT-based front-end amplifiers into a flexible shank form factor enables single-neuron recording in the mouse cortex with on-site filtering and amplification.</description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 Mar</publication><modification>2025-04-04T20:07:12.32Z</modification><creation>2025-04-04T20:07:12.32Z</creation></dates><accession>S-EPMC10959418</accession><cross_references><pubmed>38517957</pubmed><doi>10.1126/sciadv.adi9710</doi></cross_references></HashMap>