{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Li Q"],"funding":["National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund)","China Postdoctoral Science Foundation","Science and Technology Commission of Shanghai Municipality (Shanghai Municipal Science and Technology Commission)"],"pagination":["2686"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC10973520"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(1)"],"pubmed_abstract":["With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO<sub>2</sub> (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of over 10<sup>8</sup>, and high endurance up to 2×10<sup>7</sup> cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorph"],"journal":["Nature communications"],"pubmed_title":["High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics."],"pmcid":["PMC10973520"],"funding_grant_id":["22175042","BX2021070","22501100900"],"pubmed_authors":["Liu Y","Zhang DW","Li Z","Yang Y","Sun Q","Wang S","Hu X","Wang T","Chen L","Li Q","Yu J","Meng J"],"additional_accession":[]},"is_claimable":false,"name":"High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics.","description":"With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO<sub>2</sub> (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of over 10<sup>8</sup>, and high endurance up to 2×10<sup>7</sup> cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorph","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Mar","modification":"2025-04-26T11:26:29.997Z","creation":"2025-04-06T13:39:52.221Z"},"accession":"S-EPMC10973520","cross_references":{"pubmed":["38538586"],"doi":["10.1038/s41467-024-46878-5"]}}