biostudies-literatureLi QNational Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund)China Postdoctoral Science FoundationScience and Technology Commission of Shanghai Municipality (Shanghai Municipal Science and Technology Commission)2686https://www.ebi.ac.uk/biostudies/studies/S-EPMC10973520biostudies-literatureUnknown15(1)With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO₂ (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I_ON/I_OFF) of over 10⁸, and high endurance up to 2×10⁷ cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorphNature communicationsHigh-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics.PMC1097352022175042BX202107022501100900Liu YZhang DWLi ZYang YSun QWang SHu XWang TChen LLi QYu JMeng JfalseHigh-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics.With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO₂ (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I_ON/I_OFF) of over 10⁸, and high endurance up to 2×10⁷ cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorph2024-01-01T00:00:00Z2024 Mar2025-04-26T11:26:29.997Z2025-04-06T13:39:52.221ZS-EPMC109735203853858610.1038/s41467-024-46878-5