{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Kwon Y"],"funding":["Korea Toray Science Foundation","National Research Foundation of Korea"],"pagination":["e2308262"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11005684"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["11(14)"],"pubmed_abstract":["Technologies that detect circularly polarized light (CPL), particularly in the UV region, have significant potential for various applications, including bioimaging and optical communication. However, a major challenge in directly sensing CPL arises from the conflicting requirements of planar structures for efficient charge transport and distorted structures for effective interaction with CPL. Here, a novel design of an axially chiral n-type organic semiconductor is presented to surmount the challenge, in which a binaphthyl group results in a high dissymmetry factor at the molecular level, while maintaining excellent electron-transporting characteristics through the naphthalene diimide group. Experimental and computational methods reveal different stacking behaviors in homochiral and heterochiral assemblies, yielding different structures: Nanowires and nanoparticles, respectively. Especially, the homochiral assemblies exhibit effective π-π stacking between naphthalene diimides despite axial chirality. Thus, phototransistors fabricated using enantiomers exhibit a high maximum electron mobility of 0.22 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and a detectivity of 3.9 × 10<sup>12</sup> Jones, alongside the CPL distinguishing ability with a dissymmetry factor of responsivity of 0.05. Furthermore, the material possesses a wide bandgap, contributing to its excellent visible-blind UV-selective detection. These findings highlight the new strategy for compact CPL detectors, coupled with the demonstration of less-explored n-type and UV region phototransistors."],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Axially Chiral Organic Semiconductors for Visible-Blind UV-Selective Circularly Polarized Light Detection."],"pmcid":["PMC11005684"],"funding_grant_id":["2023R1A2C3007715","2021R1A4A1032515","RS-2023-00281944","RS‐2023‐00281944"],"pubmed_authors":["Lee WB","Kwon Y","Jung JY","Oh JH"],"additional_accession":[]},"is_claimable":false,"name":"Axially Chiral Organic Semiconductors for Visible-Blind UV-Selective Circularly Polarized Light Detection.","description":"Technologies that detect circularly polarized light (CPL), particularly in the UV region, have significant potential for various applications, including bioimaging and optical communication. However, a major challenge in directly sensing CPL arises from the conflicting requirements of planar structures for efficient charge transport and distorted structures for effective interaction with CPL. Here, a novel design of an axially chiral n-type organic semiconductor is presented to surmount the challenge, in which a binaphthyl group results in a high dissymmetry factor at the molecular level, while maintaining excellent electron-transporting characteristics through the naphthalene diimide group. Experimental and computational methods reveal different stacking behaviors in homochiral and heterochiral assemblies, yielding different structures: Nanowires and nanoparticles, respectively. Especially, the homochiral assemblies exhibit effective π-π stacking between naphthalene diimides despite axial chirality. Thus, phototransistors fabricated using enantiomers exhibit a high maximum electron mobility of 0.22 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and a detectivity of 3.9 × 10<sup>12</sup> Jones, alongside the CPL distinguishing ability with a dissymmetry factor of responsivity of 0.05. Furthermore, the material possesses a wide bandgap, contributing to its excellent visible-blind UV-selective detection. These findings highlight the new strategy for compact CPL detectors, coupled with the demonstration of less-explored n-type and UV region phototransistors.","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Apr","modification":"2024-11-13T18:34:04.379Z","creation":"2024-11-13T18:34:04.379Z"},"accession":"S-EPMC11005684","cross_references":{"pubmed":["38311579"],"doi":["10.1002/advs.202308262"]}}