<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>15(1)</volume><submitter>Chang C</submitter><pubmed_abstract>Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS&lt;sub>2&lt;/sub> bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaki</pubmed_abstract><journal>Nature communications</journal><pagination>4130</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11099013</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Remote epitaxy of single-crystal rhombohedral WS&lt;sub>2&lt;/sub> bilayers.</pubmed_title><pmcid>PMC11099013</pmcid><pubmed_authors>Ding F</pubmed_authors><pubmed_authors>Tang Z</pubmed_authors><pubmed_authors>Huang C</pubmed_authors><pubmed_authors>Liu K</pubmed_authors><pubmed_authors>Feng Z</pubmed_authors><pubmed_authors>Ren Y</pubmed_authors><pubmed_authors>Wei W</pubmed_authors><pubmed_authors>Guo Q</pubmed_authors><pubmed_authors>Zhou X</pubmed_authors><pubmed_authors>Wang J</pubmed_authors><pubmed_authors>Li W</pubmed_authors><pubmed_authors>Zhang X</pubmed_authors><pubmed_authors>Cai Y</pubmed_authors><pubmed_authors>Chang C</pubmed_authors><pubmed_authors>Xu X</pubmed_authors></additional><is_claimable>false</is_claimable><name>Remote epitaxy of single-crystal rhombohedral WS&lt;sub>2&lt;/sub> bilayers.</name><description>Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS&lt;sub>2&lt;/sub> bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaki</description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 May</publication><modification>2026-04-12T15:30:26.832Z</modification><creation>2026-04-07T13:17:59.975Z</creation></dates><accession>S-EPMC11099013</accession><cross_references><pubmed>38755189</pubmed><doi>10.1038/s41467-024-48522-8</doi></cross_references></HashMap>