{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["14(13)"],"submitter":["Huang YF"],"pubmed_abstract":["Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air-GaAs interface over a broad range of wavelengths. These NTs exhibit exceptional UV-Vis light absorption (up to 99%) and maintain high NIR absorption (33-60%) compared to bare GaAs. Moreover, possessing a graded layer with a low refractive index (n = 1.01 to 1.12), they achieve angular and polarization-independent antireflection properties exceeding 80° at 632.8 nm, aligning with perfect antireflective coating theory predictions. This approach is anticipated to enhance the performance of optoelectronic devices across a wide range of applications."],"journal":["Nanomaterials (Basel, Switzerland)"],"pagination":["1154"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11243535"],"repository":["biostudies-literature"],"pubmed_title":["Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection."],"pmcid":["PMC11243535"],"pubmed_authors":["Huang YF","Chen LC","Chen KH","Modak VA","Jen YJ"],"additional_accession":[]},"is_claimable":false,"name":"Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection.","description":"Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air-GaAs interface over a broad range of wavelengths. These NTs exhibit exceptional UV-Vis light absorption (up to 99%) and maintain high NIR absorption (33-60%) compared to bare GaAs. Moreover, possessing a graded layer with a low refractive index (n = 1.01 to 1.12), they achieve angular and polarization-independent antireflection properties exceeding 80° at 632.8 nm, aligning with perfect antireflective coating theory predictions. This approach is anticipated to enhance the performance of optoelectronic devices across a wide range of applications.","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Jul","modification":"2025-04-19T14:39:55.935Z","creation":"2025-04-19T14:39:55.935Z"},"accession":"S-EPMC11243535","cross_references":{"pubmed":["38998759"],"doi":["10.3390/nano14131154"]}}