<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>9(35)</volume><submitter>Oh HT</submitter><pubmed_abstract>This study focuses on the discovery of a single-component molecular resist for extreme ultraviolet (EUV) lithography by employing the ionizing radiation-induced decomposition of carbon-fluorine chemical bonds. The target material, &lt;b>DHP-L6&lt;/b>, was synthesized by bonding perfluoroalkyl ether moieties to amorphous dendritic hexaphenol (DHP) with a high glass transition temperature. Upon exposure to EUV and electron beam irradiation, &lt;b>DHP-L6&lt;/b> films exhibited a decreasing solubility in fluorous developer media, resulting in negative-tone images. The underlying chemical mechanisms were elucidated by Fourier transform-infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy, and nanoindentation experiments. These analyses highlighted the possible electron-induced decomposition of C-F bonds in &lt;b>DHP-L6&lt;/b>, leading to molecular network formation via recombination of the resulting C-centered radicals. Subsequent high-resolution lithographic patterning under EUV irradiation showed that &lt;b>DHP-L6&lt;/b> could create stencil patterns with a line width of 26 nm at an exposure dose of 110 mJ cm&lt;sup>-2&lt;/sup>. These results confirm that single-component small molecular compounds with fluoroalkyl moieties can be employed as patterning materials under ionizing radiation. Nonetheless, additional research is required to reduce the relatively high exposure energy for high-resolution patterning and to enhance the line-edge roughness of the produced stencil.</pubmed_abstract><journal>ACS omega</journal><pagination>37365-37373</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11375697</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure.</pubmed_title><pmcid>PMC11375697</pmcid><pubmed_authors>Jung SH</pubmed_authors><pubmed_authors>Ku Y</pubmed_authors><pubmed_authors>Lee S</pubmed_authors><pubmed_authors>Koh C</pubmed_authors><pubmed_authors>Kim G</pubmed_authors><pubmed_authors>Nishi T</pubmed_authors><pubmed_authors>Kim HW</pubmed_authors><pubmed_authors>Lee JK</pubmed_authors><pubmed_authors>Kim K</pubmed_authors><pubmed_authors>Oh HT</pubmed_authors><pubmed_authors>Park BG</pubmed_authors></additional><is_claimable>false</is_claimable><name>Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure.</name><description>This study focuses on the discovery of a single-component molecular resist for extreme ultraviolet (EUV) lithography by employing the ionizing radiation-induced decomposition of carbon-fluorine chemical bonds. The target material, &lt;b>DHP-L6&lt;/b>, was synthesized by bonding perfluoroalkyl ether moieties to amorphous dendritic hexaphenol (DHP) with a high glass transition temperature. Upon exposure to EUV and electron beam irradiation, &lt;b>DHP-L6&lt;/b> films exhibited a decreasing solubility in fluorous developer media, resulting in negative-tone images. The underlying chemical mechanisms were elucidated by Fourier transform-infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy, and nanoindentation experiments. These analyses highlighted the possible electron-induced decomposition of C-F bonds in &lt;b>DHP-L6&lt;/b>, leading to molecular network formation via recombination of the resulting C-centered radicals. Subsequent high-resolution lithographic patterning under EUV irradiation showed that &lt;b>DHP-L6&lt;/b> could create stencil patterns with a line width of 26 nm at an exposure dose of 110 mJ cm&lt;sup>-2&lt;/sup>. These results confirm that single-component small molecular compounds with fluoroalkyl moieties can be employed as patterning materials under ionizing radiation. Nonetheless, additional research is required to reduce the relatively high exposure energy for high-resolution patterning and to enhance the line-edge roughness of the produced stencil.</description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 Sep</publication><modification>2025-04-19T12:40:21.899Z</modification><creation>2025-04-19T12:40:21.899Z</creation></dates><accession>S-EPMC11375697</accession><cross_references><pubmed>39246471</pubmed><doi>10.1021/acsomega.4c05535</doi></cross_references></HashMap>