<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Liu X</submitter><funding>Department of Science and Technology, Hubei Provincial People&amp;apos;s Government</funding><funding>Department of Science and Technology, Hubei Provincial People's Government</funding><pagination>e2402158</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11462292</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>11(37)</volume><pubmed_abstract>Sol-gel processed zinc oxide (ZnO) is one of the most widely used electron transport layers (ETLs) in inverted organic solar cells (OSCs). The high annealing temperature (≈200 °C) required for sintering to ensure a high electron mobility however results in severe damage to flexible substrates. Thus, flexible organic solar cells based on sol-gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium-doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In-doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems. For the PM6:L8-BO system, the efficiency increases from 17.0% for the pristine ZnO-</pubmed_abstract><journal>Advanced science (Weinheim, Baden-Wurttemberg, Germany)</journal><pubmed_title>In-Doped ZnO Electron Transport Layer for High-Efficiency Ultrathin Flexible Organic Solar Cells.</pubmed_title><pmcid>PMC11462292</pmcid><funding_grant_id>2023BAB109</funding_grant_id><pubmed_authors>Ren X</pubmed_authors><pubmed_authors>Xia Z</pubmed_authors><pubmed_authors>Zhang D</pubmed_authors><pubmed_authors>Zhu Y</pubmed_authors><pubmed_authors>Liao X</pubmed_authors><pubmed_authors>Huang H</pubmed_authors><pubmed_authors>Cheng Y</pubmed_authors><pubmed_authors>Liu X</pubmed_authors><pubmed_authors>Yang X</pubmed_authors><pubmed_authors>Jiang Z</pubmed_authors><pubmed_authors>Ren L</pubmed_authors><pubmed_authors>Tan W</pubmed_authors><pubmed_authors>Huang W</pubmed_authors><pubmed_authors>Lu J</pubmed_authors><pubmed_authors>Ji Y</pubmed_authors><pubmed_authors>McNeill C</pubmed_authors></additional><is_claimable>false</is_claimable><name>In-Doped ZnO Electron Transport Layer for High-Efficiency Ultrathin Flexible Organic Solar Cells.</name><description>Sol-gel processed zinc oxide (ZnO) is one of the most widely used electron transport layers (ETLs) in inverted organic solar cells (OSCs). The high annealing temperature (≈200 °C) required for sintering to ensure a high electron mobility however results in severe damage to flexible substrates. Thus, flexible organic solar cells based on sol-gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium-doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In-doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems. For the PM6:L8-BO system, the efficiency increases from 17.0% for the pristine ZnO-</description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 Oct</publication><modification>2026-07-14T19:42:01.101Z</modification><creation>2025-04-04T01:14:45.591Z</creation></dates><accession>S-EPMC11462292</accession><cross_references><pubmed>38923280</pubmed><doi>10.1002/advs.202402158</doi></cross_references></HashMap>