{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Xu Y"],"funding":["China Scholarship Council","Deutsche Forschungsgemeinschaft","DFG","111 Project","National Natural Science Foundation of China","International Joint Laboratory for MicroNano Manufacturing and Measurement Technologies","Xi'an Jiaotong University","Xi’an Jiaotong University","Higher Education Discipline Innovation Project"],"pagination":["e2006221"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11468882"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["33(9)"],"pubmed_abstract":["Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz., binary Sb<sub>2</sub> Te<sub>3</sub> , in the metastable rocksalt-type modification. Then a systematic computational screening over a wide range of homologous, binary and ternary chalcogenides, elucidating the critical factors th"],"journal":["Advanced materials (Deerfield Beach, Fla.)"],"pubmed_title":["Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications."],"pmcid":["PMC11468882"],"funding_grant_id":["61774123","SFB 917","BP2018008"],"pubmed_authors":["Mazzarello R","Schafer L","Evang V","Zhou Y","Wuttig M","Zhang W","Vom Bruch F","Reindl J","Deringer VL","Wang X","Wang JJ","Ma E","Xu Y"],"additional_accession":[]},"is_claimable":false,"name":"Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications.","description":"Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz., binary Sb<sub>2</sub> Te<sub>3</sub> , in the metastable rocksalt-type modification. Then a systematic computational screening over a wide range of homologous, binary and ternary chalcogenides, elucidating the critical factors th","dates":{"release":"2021-01-01T00:00:00Z","publication":"2021 Mar","modification":"2025-04-04T11:04:07.921Z","creation":"2025-04-04T11:04:07.921Z"},"accession":"S-EPMC11468882","cross_references":{"pubmed":["33491816"],"doi":["10.1002/adma.202006221"]}}