<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Xu Y</submitter><funding>China Scholarship Council</funding><funding>Deutsche Forschungsgemeinschaft</funding><funding>DFG</funding><funding>111 Project</funding><funding>National Natural Science Foundation of China</funding><funding>International Joint Laboratory for MicroNano Manufacturing and Measurement Technologies</funding><funding>Xi'an Jiaotong University</funding><funding>Xi’an Jiaotong University</funding><funding>Higher Education Discipline Innovation Project</funding><pagination>e2006221</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11468882</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>33(9)</volume><pubmed_abstract>Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz., binary Sb&lt;sub>2&lt;/sub> Te&lt;sub>3&lt;/sub> , in the metastable rocksalt-type modification. Then a systematic computational screening over a wide range of homologous, binary and ternary chalcogenides, elucidating the critical factors th</pubmed_abstract><journal>Advanced materials (Deerfield Beach, Fla.)</journal><pubmed_title>Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications.</pubmed_title><pmcid>PMC11468882</pmcid><funding_grant_id>61774123</funding_grant_id><funding_grant_id>SFB 917</funding_grant_id><funding_grant_id>BP2018008</funding_grant_id><pubmed_authors>Mazzarello R</pubmed_authors><pubmed_authors>Schafer L</pubmed_authors><pubmed_authors>Evang V</pubmed_authors><pubmed_authors>Zhou Y</pubmed_authors><pubmed_authors>Wuttig M</pubmed_authors><pubmed_authors>Zhang W</pubmed_authors><pubmed_authors>Vom Bruch F</pubmed_authors><pubmed_authors>Reindl J</pubmed_authors><pubmed_authors>Deringer VL</pubmed_authors><pubmed_authors>Wang X</pubmed_authors><pubmed_authors>Wang JJ</pubmed_authors><pubmed_authors>Ma E</pubmed_authors><pubmed_authors>Xu Y</pubmed_authors></additional><is_claimable>false</is_claimable><name>Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications.</name><description>Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz., binary Sb&lt;sub>2&lt;/sub> Te&lt;sub>3&lt;/sub> , in the metastable rocksalt-type modification. Then a systematic computational screening over a wide range of homologous, binary and ternary chalcogenides, elucidating the critical factors th</description><dates><release>2021-01-01T00:00:00Z</release><publication>2021 Mar</publication><modification>2025-04-04T11:04:07.921Z</modification><creation>2025-04-04T11:04:07.921Z</creation></dates><accession>S-EPMC11468882</accession><cross_references><pubmed>33491816</pubmed><doi>10.1002/adma.202006221</doi></cross_references></HashMap>