{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["11(13)"],"submitter":["Huang X"],"pubmed_abstract":["Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on-demand entangled photon sources through biexciton-exciton (XX-X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski-Krastanow grown In(Ga)As/GaAs QDs with an ultra-thin Al <sub><i>x</i></sub> Ga<sub>1-<i>x</i></sub> As layer. After carefully investigating the mechanisms governing the vanishing of wetting-layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two-photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare-earth-ion-doped crystals for solid quantum memory."],"journal":["Nanophotonics (Berlin, Germany)"],"pagination":["3093-3100"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11501422"],"repository":["biostudies-literature"],"pubmed_title":["Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory."],"pmcid":["PMC11501422"],"pubmed_authors":["Yang J","Yu S","Huang X","Song C","Rao M","Yu Y"],"additional_accession":[]},"is_claimable":false,"name":"Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory.","description":"Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on-demand entangled photon sources through biexciton-exciton (XX-X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski-Krastanow grown In(Ga)As/GaAs QDs with an ultra-thin Al <sub><i>x</i></sub> Ga<sub>1-<i>x</i></sub> As layer. After carefully investigating the mechanisms governing the vanishing of wetting-layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two-photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare-earth-ion-doped crystals for solid quantum memory.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Jun","modification":"2025-04-04T01:06:11.614Z","creation":"2025-04-04T01:06:11.614Z"},"accession":"S-EPMC11501422","cross_references":{"pubmed":["39634667"],"doi":["10.1515/nanoph-2022-0120"]}}