{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["12(14)"],"submitter":["Anopchenko A"],"pubmed_abstract":["Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [<i>Phys. Rev. B</i>, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and"],"journal":["Nanophotonics (Berlin, Germany)"],"pagination":["2913-2920"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11501972"],"repository":["biostudies-literature"],"pubmed_title":["Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films."],"pmcid":["PMC11501972"],"pubmed_authors":["Gurung S","Lee HWH","Bej S","Anopchenko A"],"additional_accession":[]},"is_claimable":false,"name":"Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films.","description":"Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [<i>Phys. Rev. B</i>, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and","dates":{"release":"2023-01-01T00:00:00Z","publication":"2023 Jul","modification":"2025-04-27T02:16:45.213Z","creation":"2025-04-06T18:31:07.15Z"},"accession":"S-EPMC11501972","cross_references":{"pubmed":["39635496"],"doi":["10.1515/nanoph-2022-0816"]}}