<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>12(14)</volume><submitter>Anopchenko A</submitter><pubmed_abstract>Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [&lt;i>Phys. Rev. B&lt;/i>, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and</pubmed_abstract><journal>Nanophotonics (Berlin, Germany)</journal><pagination>2913-2920</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11501972</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films.</pubmed_title><pmcid>PMC11501972</pmcid><pubmed_authors>Gurung S</pubmed_authors><pubmed_authors>Lee HWH</pubmed_authors><pubmed_authors>Bej S</pubmed_authors><pubmed_authors>Anopchenko A</pubmed_authors></additional><is_claimable>false</is_claimable><name>Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films.</name><description>Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [&lt;i>Phys. Rev. B&lt;/i>, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023 Jul</publication><modification>2025-04-27T02:16:45.213Z</modification><creation>2025-04-06T18:31:07.15Z</creation></dates><accession>S-EPMC11501972</accession><cross_references><pubmed>39635496</pubmed><doi>10.1515/nanoph-2022-0816</doi></cross_references></HashMap>