{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhang Z"],"funding":["Natural Science Foundation of Beijing Municipality (Beijing Natural Science Foundation)","National Natural Science Foundation of China (National Science Foundation of China)"],"pagination":["10436"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11608312"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(1)"],"pubmed_abstract":["Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimensional GaN remains limited due to the difficulties in experimental characterization. Here, for the first time, we have experimentally determined the phonon dispersion of buckled two-dimensional GaN by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy. A phonon band gap of ~40 meV between the acoustic and optical phonon branches is identified for buckled two-dimensional GaN. This phonon band gap is significantly larger than that of ~20 meV f"],"journal":["Nature communications"],"pubmed_title":["Phonon dispersion of buckled two-dimensional GaN."],"pmcid":["PMC11608312"],"funding_grant_id":["No. 62104010","No. 62374010","No. Z200004"],"pubmed_authors":["Jiang H","Shen B","Wang J","Wang P","Gao P","Zhang Z","Zhang Y","Wang T","Wang X","Xu X","Wang Z","Liu F","Yu Y"],"additional_accession":[]},"is_claimable":false,"name":"Phonon dispersion of buckled two-dimensional GaN.","description":"Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimensional GaN remains limited due to the difficulties in experimental characterization. Here, for the first time, we have experimentally determined the phonon dispersion of buckled two-dimensional GaN by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy. A phonon band gap of ~40 meV between the acoustic and optical phonon branches is identified for buckled two-dimensional GaN. This phonon band gap is significantly larger than that of ~20 meV f","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Nov","modification":"2025-04-04T00:21:47.226Z","creation":"2025-04-04T00:21:47.226Z"},"accession":"S-EPMC11608312","cross_references":{"pubmed":["39616154"],"doi":["10.1038/s41467-024-54921-8"]}}