{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Liu X"],"funding":["Hangzhou Science and Technology Bureau","National Basic Research Program of China","Research Funds of Hangzhou Institute for Advanced Study","National Natural Science Foundation of China","National Key Research and Development Program of China"],"pagination":["e2408299"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11615792"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["11(45)"],"pubmed_abstract":["As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS<sub>2</sub> photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS<sub>2</sub> photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS<sub>2</sub> while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 10<sup>4</sup> A "],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["An Ultrasensitive and Broad-Spectrum MoS&lt;sub&gt;2&lt;/sub&gt; Photodetector with Extrinsic Response Using Surrounding Homojunction."],"pmcid":["PMC11615792"],"funding_grant_id":["U2141240","2023YFA1608701","B02006C019019","11933006","62274168","62304061","TD2020002"],"pubmed_authors":["Duan J","Qiu F","Ling J","Deng H","Liu X","Dai N","Shan Y","Zhang T","Zhu J","Pan C","Rahman S","Liu C","Chen T"],"additional_accession":[]},"is_claimable":false,"name":"An Ultrasensitive and Broad-Spectrum MoS&lt;sub&gt;2&lt;/sub&gt; Photodetector with Extrinsic Response Using Surrounding Homojunction.","description":"As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS<sub>2</sub> photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS<sub>2</sub> photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS<sub>2</sub> while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 10<sup>4</sup> A ","dates":{"release":"2024-01-01T00:00:00Z","publication":"2024 Dec","modification":"2025-04-04T01:15:26.234Z","creation":"2025-04-04T01:15:26.234Z"},"accession":"S-EPMC11615792","cross_references":{"pubmed":["39412089"],"doi":["10.1002/advs.202408299"]}}