biostudies-literatureLiu XHangzhou Science and Technology BureauNational Basic Research Program of ChinaResearch Funds of Hangzhou Institute for Advanced StudyNational Natural Science Foundation of ChinaNational Key Research and Development Program of Chinae2408299https://www.ebi.ac.uk/biostudies/studies/S-EPMC11615792biostudies-literatureUnknown11(45)As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS₂ photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS₂ photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS₂ while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 10⁴ A Advanced science (Weinheim, Baden-Wurttemberg, Germany)An Ultrasensitive and Broad-Spectrum MoS<sub>2</sub> Photodetector with Extrinsic Response Using Surrounding Homojunction.PMC11615792U21412402023YFA1608701B02006C019019119330066227416862304061TD2020002Duan JQiu FLing JDeng HLiu XDai NShan YZhang TZhu JPan CRahman SLiu CChen TfalseAn Ultrasensitive and Broad-Spectrum MoS<sub>2</sub> Photodetector with Extrinsic Response Using Surrounding Homojunction.As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS₂ photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS₂ photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS₂ while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 10⁴ A 2024-01-01T00:00:00Z2024 Dec2025-04-04T01:15:26.234Z2025-04-04T01:15:26.234ZS-EPMC116157923941208910.1002/advs.202408299