<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>16(49)</volume><submitter>Morris BS</submitter><pubmed_abstract>Vanadium dioxide (VO&lt;sub>2&lt;/sub>) and its unique phase transition from semiconductor to metal near room temperature (&lt;i>T&lt;/i>&lt;sub>IMT&lt;/sub> = 68 °C) offer significant potential for applications in smart materials and advanced technologies. This transition is accompanied by a drastic modulation of VO&lt;sub>2&lt;/sub>'s optical properties in the near- and far-infrared regions. Tungsten (W) has been successfully used as a dopant to lower the transition to room temperature. VO&lt;sub>2&lt;/sub> is highly dependent on the synthesis method, as for each fabrication protocol, the optical properties differ. Therefore, the optical properties of VO&lt;sub>2&lt;/sub> must be determined frequently. In this work, a universal analysis procedure to accurately determine the optical properties of all pristine VO&lt;sub>2&lt;/sub></pubmed_abstract><journal>ACS applied materials &amp; interfaces</journal><pagination>68621-68631</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11648941</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Developing an Analysis Procedure and Dispersion Model for Pristine and W-Doped VO&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; Thin Films Using Density Functional Theory and Spectroscopic Ellipsometry.</pubmed_title><pmcid>PMC11648941</pmcid><pubmed_authors>Shayegan Z</pubmed_authors><pubmed_authors>Morris BS</pubmed_authors><pubmed_authors>Chaker M</pubmed_authors><pubmed_authors>Koch D</pubmed_authors><pubmed_authors>Palpant B</pubmed_authors></additional><is_claimable>false</is_claimable><name>Developing an Analysis Procedure and Dispersion Model for Pristine and W-Doped VO&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; Thin Films Using Density Functional Theory and Spectroscopic Ellipsometry.</name><description>Vanadium dioxide (VO&lt;sub>2&lt;/sub>) and its unique phase transition from semiconductor to metal near room temperature (&lt;i>T&lt;/i>&lt;sub>IMT&lt;/sub> = 68 °C) offer significant potential for applications in smart materials and advanced technologies. This transition is accompanied by a drastic modulation of VO&lt;sub>2&lt;/sub>'s optical properties in the near- and far-infrared regions. Tungsten (W) has been successfully used as a dopant to lower the transition to room temperature. VO&lt;sub>2&lt;/sub> is highly dependent on the synthesis method, as for each fabrication protocol, the optical properties differ. Therefore, the optical properties of VO&lt;sub>2&lt;/sub> must be determined frequently. In this work, a universal analysis procedure to accurately determine the optical properties of all pristine VO&lt;sub>2&lt;/sub></description><dates><release>2024-01-01T00:00:00Z</release><publication>2024 Dec</publication><modification>2026-06-06T07:09:43.415Z</modification><creation>2026-06-06T03:05:59.575Z</creation></dates><accession>S-EPMC11648941</accession><cross_references><pubmed>39621531</pubmed><doi>10.1021/acsami.4c15356</doi></cross_references></HashMap>