biostudies-literatureKwon GYonsei UniversityNational Research Foundation of Korea1619-1629https://www.ebi.ac.uk/biostudies/studies/S-EPMC11752511biostudies-literatureUnknown19(1)To achieve the commercialization of two-dimensional (2D) semiconductors, the identification of an appropriate combination of 2D semiconductors and three-dimensional (3D) metals is crucial. Furthermore, understanding the van der Waals (vdW) interactions between these materials in thin-film semiconductor processes is essential. Optimizing these interactions requires precise control over the properties of the vdW interface through specific pre- or post-treatment methods. This study utilizes Se-environment annealing as a post-treatment technique, which allows for modification of the vdW gap distance and enhancement of the stability of the interfacial structure through the process of Se intercalation and deintercalation at the 2D-3D interface. The depth of Se intercalation and deintercalation iACS nanoReconfiguring van der Waals Metal-Semiconductor Contacts via Selenium Intercalation/Deintercalation Post-Treatment.PMC11752511RS-2024-003419882023-12-01692022M3F3A2A01073562RS-2023-00260527Cho MHKim DPark HIm SKim HSOh SKwon GJeong KKoh WfalseReconfiguring van der Waals Metal-Semiconductor Contacts via Selenium Intercalation/Deintercalation Post-Treatment.To achieve the commercialization of two-dimensional (2D) semiconductors, the identification of an appropriate combination of 2D semiconductors and three-dimensional (3D) metals is crucial. Furthermore, understanding the van der Waals (vdW) interactions between these materials in thin-film semiconductor processes is essential. Optimizing these interactions requires precise control over the properties of the vdW interface through specific pre- or post-treatment methods. This study utilizes Se-environment annealing as a post-treatment technique, which allows for modification of the vdW gap distance and enhancement of the stability of the interfacial structure through the process of Se intercalation and deintercalation at the 2D-3D interface. The depth of Se intercalation and deintercalation i2025-01-01T00:00:00Z2025 Jan2025-04-05T11:34:32.885Z2025-04-05T11:34:32.885ZS-EPMC117525113970799610.1021/acsnano.4c15117