<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Izhar</submitter><funding>United States Department of Defense | Defense Advanced Research Projects Agency (DARPA)</funding><funding>United States Department of Defense | Defense Advanced Research Projects Agency</funding><pagination>19</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11754792</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>11(1)</volume><pubmed_abstract>Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( kt2 ) to form filters with low insertion loss and high selectivity. However, both the Q and kt2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high-frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a kt2 of 11.8% and a Qp of 236.6 at the parallel resonance frequency ( fp ) of 17.9 GHz. These resulting figures-of-merit are ( FoM1=kt2Qp and FoM2=fpFoM1×10-9 ) 27.9 and 500, respectively. These and the kt2 are significantly higher than previously reported AlN/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at a ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.</pubmed_abstract><journal>Microsystems &amp; nanoengineering</journal><pubmed_title>Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era.</pubmed_title><pmcid>PMC11754792</pmcid><funding_grant_id>HR0011221-9-0037</funding_grant_id><pubmed_authors>Izhar</pubmed_authors><pubmed_authors>Leathersich J</pubmed_authors><pubmed_authors>Kochhar A</pubmed_authors><pubmed_authors>Moe C</pubmed_authors><pubmed_authors>Yao S</pubmed_authors><pubmed_authors>Du X</pubmed_authors><pubmed_authors>Stach EA</pubmed_authors><pubmed_authors>Vetury R</pubmed_authors><pubmed_authors>Musavigharavi P</pubmed_authors><pubmed_authors>Fiagbenu MMA</pubmed_authors><pubmed_authors>Deng Y</pubmed_authors><pubmed_authors>Olsson RH</pubmed_authors></additional><is_claimable>false</is_claimable><name>Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era.</name><description>Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( kt2 ) to form filters with low insertion loss and high selectivity. However, both the Q and kt2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high-frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a kt2 of 11.8% and a Qp of 236.6 at the parallel resonance frequency ( fp ) of 17.9 GHz. These resulting figures-of-merit are ( FoM1=kt2Qp and FoM2=fpFoM1×10-9 ) 27.9 and 500, respectively. These and the kt2 are significantly higher than previously reported AlN/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at a ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Jan</publication><modification>2025-04-05T00:26:13.973Z</modification><creation>2025-04-05T00:26:13.973Z</creation></dates><accession>S-EPMC11754792</accession><cross_references><pubmed>39843431</pubmed><doi>10.1038/s41378-024-00857-4</doi></cross_references></HashMap>