{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["37(8)"],"submitter":["He Y"],"funding":["Research Alliance-Center for Simulation and Data Science","DFG","Deutsche Forschungsgemeinschaft","Carl Zeiss Foundation; Helmholtz program \"Materials Systems Engineering\" (MSE); KIT via the project Auto.MAP","financial support from the China Scholarship Council"],"pubmed_abstract":["Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic tr"],"journal":["Advanced materials (Deerfield Beach, Fla.)"],"pagination":["e2410060"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11854872"],"repository":["biostudies-literature"],"pubmed_title":["Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices."],"pmcid":["PMC11854872"],"pubmed_authors":["Hahn H","Brezesinski T","Kowalski PM","Ting YY","Diemant T","Ma Y","Dai Y","Schweidler S","Aghassi-Hagmann J","He Y","Breitung B","Hu H","Marques GC","Lin J"],"additional_accession":[]},"is_claimable":false,"name":"Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.","description":"Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic tr","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Feb","modification":"2025-04-04T02:45:13.641Z","creation":"2025-04-04T02:45:13.641Z"},"accession":"S-EPMC11854872","cross_references":{"pubmed":["39564745"],"doi":["10.1002/adma.202410060"]}}