biostudies-literatureUnknown37(8)He YResearch Alliance-Center for Simulation and Data ScienceDFGDeutsche ForschungsgemeinschaftCarl Zeiss Foundation; Helmholtz program "Materials Systems Engineering" (MSE); KIT via the project Auto.MAPfinancial support from the China Scholarship CouncilNon-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic trAdvanced materials (Deerfield Beach, Fla.)e2410060https://www.ebi.ac.uk/biostudies/studies/S-EPMC11854872biostudies-literaturePrinted High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.PMC11854872Hahn HBrezesinski TKowalski PMTing YYDiemant TMa YDai YSchweidler SAghassi-Hagmann JHe YBreitung BHu HMarques GCLin JfalsePrinted High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic tr2025-01-01T00:00:00Z2025 Feb2025-04-04T02:45:13.641Z2025-04-04T02:45:13.641ZS-EPMC118548723956474510.1002/adma.202410060