{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Guo G"],"funding":["the National Key Research and Development Program of China","General project of natural science foundation of Jilin province","Youth Project of National Natural Science Foundation of China","Science and technology research project of Education Department of Jilin Prov-ince","Jilin Province Science and Technology Development Program Project"],"pagination":["1167"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC11858985"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["25(4)"],"pubmed_abstract":["Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO<sub>2</sub> reflective grating nanostructures increases the average light absorptivity from 0.64 to 0.84 in the 0.4-1.1 μm range and from 0.31 to 0.56 in the 1.1-1.6 μm range. At an applied bias of 0.95 V<sub>br-apd</sub>, the responsivity reaches 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm. This research provides theoretical insights for design"],"journal":["Sensors (Basel, Switzerland)"],"pubmed_title":["Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced Nanostructure."],"pmcid":["PMC11858985"],"funding_grant_id":["20190302062GX","12004139","2022YFB3604702, 2018YFB1801902","20240101297JC","JJKH20240646KJ"],"pubmed_authors":["Zheng K","Lv J","Zhao B","Guo G","Liang J","Chen W","Qin Y","Chen Y","Wang W","Wang X","Zhao Y","Gao D"],"additional_accession":[]},"is_claimable":false,"name":"Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced Nanostructure.","description":"Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO<sub>2</sub> reflective grating nanostructures increases the average light absorptivity from 0.64 to 0.84 in the 0.4-1.1 μm range and from 0.31 to 0.56 in the 1.1-1.6 μm range. At an applied bias of 0.95 V<sub>br-apd</sub>, the responsivity reaches 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm. This research provides theoretical insights for design","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Feb","modification":"2025-04-03T23:32:28.568Z","creation":"2025-04-03T23:32:28.568Z"},"accession":"S-EPMC11858985","cross_references":{"pubmed":["40006395"],"doi":["10.3390/s25041167"]}}