<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Guo G</submitter><funding>the National Key Research and Development Program of China</funding><funding>General project of natural science foundation of Jilin province</funding><funding>Youth Project of National Natural Science Foundation of China</funding><funding>Science and technology research project of Education Department of Jilin Prov-ince</funding><funding>Jilin Province Science and Technology Development Program Project</funding><pagination>1167</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11858985</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>25(4)</volume><pubmed_abstract>Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO&lt;sub>2&lt;/sub> reflective grating nanostructures increases the average light absorptivity from 0.64 to 0.84 in the 0.4-1.1 μm range and from 0.31 to 0.56 in the 1.1-1.6 μm range. At an applied bias of 0.95 V&lt;sub>br-apd&lt;/sub>, the responsivity reaches 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm. This research provides theoretical insights for design</pubmed_abstract><journal>Sensors (Basel, Switzerland)</journal><pubmed_title>Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced Nanostructure.</pubmed_title><pmcid>PMC11858985</pmcid><funding_grant_id>20190302062GX</funding_grant_id><funding_grant_id>12004139</funding_grant_id><funding_grant_id>2022YFB3604702, 2018YFB1801902</funding_grant_id><funding_grant_id>20240101297JC</funding_grant_id><funding_grant_id>JJKH20240646KJ</funding_grant_id><pubmed_authors>Zheng K</pubmed_authors><pubmed_authors>Lv J</pubmed_authors><pubmed_authors>Zhao B</pubmed_authors><pubmed_authors>Guo G</pubmed_authors><pubmed_authors>Liang J</pubmed_authors><pubmed_authors>Chen W</pubmed_authors><pubmed_authors>Qin Y</pubmed_authors><pubmed_authors>Chen Y</pubmed_authors><pubmed_authors>Wang W</pubmed_authors><pubmed_authors>Wang X</pubmed_authors><pubmed_authors>Zhao Y</pubmed_authors><pubmed_authors>Gao D</pubmed_authors></additional><is_claimable>false</is_claimable><name>Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced Nanostructure.</name><description>Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO&lt;sub>2&lt;/sub> reflective grating nanostructures increases the average light absorptivity from 0.64 to 0.84 in the 0.4-1.1 μm range and from 0.31 to 0.56 in the 1.1-1.6 μm range. At an applied bias of 0.95 V&lt;sub>br-apd&lt;/sub>, the responsivity reaches 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm. This research provides theoretical insights for design</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Feb</publication><modification>2025-04-03T23:32:28.568Z</modification><creation>2025-04-03T23:32:28.568Z</creation></dates><accession>S-EPMC11858985</accession><cross_references><pubmed>40006395</pubmed><doi>10.3390/s25041167</doi></cross_references></HashMap>