<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>8(9)</volume><submitter>Tu J</submitter><pubmed_abstract>We report a fast and straightforward preparation of centimeter-sized Cu(111) from polycrystalline Cu foil by the strain-free abnormal grain growth method and the subsequent growth of monolayer graphene by chemical vapor deposition (CVD). The fabrication of Cu(111) and graphene was streamlined into a straightforward process using a CVD system consisting of a tube furnace and a quartz boat. It was found that the annealing temperature and time are critical in the growth of Cu(111). Heating at 1060 °C for 3 h led to the conversion of polycrystalline Cu to Cu(111), yielding large grains and high-quality monolayer graphene. Molecular dynamics (MD) simulations supported the experimental findings, demonstrating that annealing leads to increased mobility of Cu grain boundaries. MD simulations furth</pubmed_abstract><journal>ACS applied nano materials</journal><pagination>4926-4939</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11894592</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Chemical Vapor Deposition of Monolayer Graphene on Centimeter-Sized Cu(111) for Nanoelectronics Applications.</pubmed_title><pmcid>PMC11894592</pmcid><pubmed_authors>Yan M</pubmed_authors><pubmed_authors>Kiani A</pubmed_authors><pubmed_authors>Wolf LM</pubmed_authors><pubmed_authors>Zhou W</pubmed_authors><pubmed_authors>Tu J</pubmed_authors></additional><is_claimable>false</is_claimable><name>Chemical Vapor Deposition of Monolayer Graphene on Centimeter-Sized Cu(111) for Nanoelectronics Applications.</name><description>We report a fast and straightforward preparation of centimeter-sized Cu(111) from polycrystalline Cu foil by the strain-free abnormal grain growth method and the subsequent growth of monolayer graphene by chemical vapor deposition (CVD). The fabrication of Cu(111) and graphene was streamlined into a straightforward process using a CVD system consisting of a tube furnace and a quartz boat. It was found that the annealing temperature and time are critical in the growth of Cu(111). Heating at 1060 °C for 3 h led to the conversion of polycrystalline Cu to Cu(111), yielding large grains and high-quality monolayer graphene. Molecular dynamics (MD) simulations supported the experimental findings, demonstrating that annealing leads to increased mobility of Cu grain boundaries. MD simulations furth</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Mar</publication><modification>2025-04-06T22:37:12.821Z</modification><creation>2025-04-04T02:54:02.747Z</creation></dates><accession>S-EPMC11894592</accession><cross_references><pubmed>40078598</pubmed><doi>10.1021/acsanm.5c00588</doi></cross_references></HashMap>