<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Zhang H</submitter><funding>Fundamental Research Funds for the Central Universities</funding><funding>Division of Materials Sciences and Engineering</funding><funding>National Natural Science Foundation of China</funding><funding>National Key Research and Development Program of China</funding><funding>National Science Foundation</funding><pagination>4689-4695</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC11951140</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>25(12)</volume><pubmed_abstract>Crystal defects, whether intrinsic or engineered, drive many fundamental phenomena and novel functionalities of quantum materials. Here, we report symmetry-breaking phenomena induced by Sn vacancy defects on the surface of epitaxial Kagome antiferromagnetic FeSn films using low-temperature scanning tunneling microscopy and spectroscopy. Near the single Sn vacancy, anisotropic quasiparticle interference patterns are observed in the differential conductance d&lt;i>I&lt;/i>/d&lt;i>V&lt;/i> maps, breaking the 6-fold rotational symmetry of the Kagome layer. Furthermore, the Sn vacancy defects induce bound states that exhibit anomalous Zeeman shift under an out-of-plane magnetic field, where the energy of the bound states moves linearly toward higher energy independent of the direction of the magnetic field. Under an in-plane magnetic field, the shift of the bound state energy also shows a 2-fold oscillating behavior as a function of the azimuth angle. These findings demonstrate defect-enabled new functionalities in Kagome antiferromagnets for potential applications in nanoscale spintronic devices.</pubmed_abstract><journal>Nano letters</journal><pubmed_title>Anisotropic Response of Defect Bound States to the Magnetic Field in Epitaxial FeSn Films.</pubmed_title><pmcid>PMC11951140</pmcid><funding_grant_id>DUT24LK007</funding_grant_id><funding_grant_id>DUT22LAB104</funding_grant_id><funding_grant_id>EFMA-1741673</funding_grant_id><funding_grant_id>DUT24RC(3)015</funding_grant_id><funding_grant_id>DE-SC0017632</funding_grant_id><funding_grant_id>DUT22ZD103</funding_grant_id><funding_grant_id>12304210</funding_grant_id><funding_grant_id>2023YFB3809600</funding_grant_id><pubmed_authors>Weinert M</pubmed_authors><pubmed_authors>Zhang H</pubmed_authors><pubmed_authors>Wang Z</pubmed_authors><pubmed_authors>Li L</pubmed_authors></additional><is_claimable>false</is_claimable><name>Anisotropic Response of Defect Bound States to the Magnetic Field in Epitaxial FeSn Films.</name><description>Crystal defects, whether intrinsic or engineered, drive many fundamental phenomena and novel functionalities of quantum materials. Here, we report symmetry-breaking phenomena induced by Sn vacancy defects on the surface of epitaxial Kagome antiferromagnetic FeSn films using low-temperature scanning tunneling microscopy and spectroscopy. Near the single Sn vacancy, anisotropic quasiparticle interference patterns are observed in the differential conductance d&lt;i>I&lt;/i>/d&lt;i>V&lt;/i> maps, breaking the 6-fold rotational symmetry of the Kagome layer. Furthermore, the Sn vacancy defects induce bound states that exhibit anomalous Zeeman shift under an out-of-plane magnetic field, where the energy of the bound states moves linearly toward higher energy independent of the direction of the magnetic field. Under an in-plane magnetic field, the shift of the bound state energy also shows a 2-fold oscillating behavior as a function of the azimuth angle. These findings demonstrate defect-enabled new functionalities in Kagome antiferromagnets for potential applications in nanoscale spintronic devices.</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Mar</publication><modification>2025-07-05T03:04:25.245Z</modification><creation>2025-07-05T03:04:25.245Z</creation></dates><accession>S-EPMC11951140</accession><cross_references><pubmed>40082247</pubmed><doi>10.1021/acs.nanolett.4c05337</doi></cross_references></HashMap>