{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Skandalos I"],"funding":["RCUK | Engineering and Physical Sciences Research Council (EPSRC)","EC | EU Framework Programme for Research and Innovation H2020 | H2020 European Institute of Innovation and Technology (H2020 The European Institute of Innovation and Technology)"],"pagination":["82"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12046052"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["4(1)"],"pubmed_abstract":["The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s<sup>-1</sup>, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss,  <63 fJ bit<sup>-1</sup> energy consumption, and  >5 dB static extinction ratio, while maintaining performance across a 20-80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quan"],"journal":["Communications engineering"],"pubmed_title":["A 100 Gb s&lt;sup&gt;-1&lt;/sup&gt; quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si."],"pmcid":["PMC12046052"],"funding_grant_id":["EP/T028475/1","871391","EP/R003076/1"],"pubmed_authors":["Gardes FY","Zilkie A","Skandalos I","Yu G","Bucio TD","Mastronardi L"],"additional_accession":[]},"is_claimable":false,"name":"A 100 Gb s&lt;sup&gt;-1&lt;/sup&gt; quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si.","description":"The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s<sup>-1</sup>, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss,  <63 fJ bit<sup>-1</sup> energy consumption, and  >5 dB static extinction ratio, while maintaining performance across a 20-80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quan","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 May","modification":"2025-07-08T03:11:37.38Z","creation":"2025-07-08T03:11:37.38Z"},"accession":"S-EPMC12046052","cross_references":{"pubmed":["40312499"],"doi":["10.1038/s44172-025-00421-6"]}}