<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Fisher P</submitter><funding>Bundesministerium f?r Bildung und Forschung</funding><funding>Universit?t Ulm</funding><pagination>11626-11631</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12314907</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>25(30)</volume><pubmed_abstract>High-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 μT/Hz for our system. We also explore the necessary improvements for achieving single-proton spin sensitivity. Combining these results with future in</pubmed_abstract><journal>Nano letters</journal><pubmed_title>High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC.</pubmed_title><pmcid>PMC12314907</pmcid><funding_grant_id>13N16296</funding_grant_id><funding_grant_id>H1137/927115</funding_grant_id><pubmed_authors>Fuhrmann J</pubmed_authors><pubmed_authors>Fisher P</pubmed_authors><pubmed_authors>Jelezko F</pubmed_authors><pubmed_authors>Haylock B</pubmed_authors><pubmed_authors>Zappacosta A</pubmed_authors><pubmed_authors>Nagy R</pubmed_authors><pubmed_authors>Gao W</pubmed_authors><pubmed_authors>Cernansky R</pubmed_authors></additional><is_claimable>false</is_claimable><name>High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC.</name><description>High-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 μT/Hz for our system. We also explore the necessary improvements for achieving single-proton spin sensitivity. Combining these results with future in</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Jul</publication><modification>2026-03-15T23:56:34.001Z</modification><creation>2025-08-14T03:05:22.938Z</creation></dates><accession>S-EPMC12314907</accession><cross_references><pubmed>40693560</pubmed><doi>10.1021/acs.nanolett.5c02515</doi></cross_references></HashMap>