{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Gerber JD"],"funding":["Core Research for Evolutional Science and Technology","Swiss National Science Foundation","European Research Council","Deutsche Forschungsgemeinschaft","Ministry of Education, Culture, Sports, Science and Technology","Universit?t Regensburg","Graphene Flagship","Japan Society for the Promotion of Science"],"pagination":["12480-12486"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12371879"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["25(33)"],"pubmed_abstract":["Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe<sub>2</sub> heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV─more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation."],"journal":["Nano letters"],"pubmed_title":["Tunable Spin-Orbit Splitting in Bilayer Graphene/WSe&lt;sub&gt;2&lt;/sub&gt; Quantum Devices."],"pmcid":["PMC12371879"],"funding_grant_id":["21H05233","SFB 1277 - 314695032","23H02052","KN 1383/7","95154","KN 1383/4","JPMJCR24A5"],"pubmed_authors":["Huang WW","Knothe A","Masseroni M","Gerber JD","Ersoy E","Laumer M","Adam C","Taniguchi T","Duprez H","Denisov AO","Tong C","Ensslin K","Fal'ko VI","Ihn T","Ostertag L","Watanabe K","Niese M"],"additional_accession":[]},"is_claimable":false,"name":"Tunable Spin-Orbit Splitting in Bilayer Graphene/WSe&lt;sub&gt;2&lt;/sub&gt; Quantum Devices.","description":"Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe<sub>2</sub> heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV─more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Aug","modification":"2026-05-09T10:38:11.798Z","creation":"2026-04-08T00:48:29.573Z"},"accession":"S-EPMC12371879","cross_references":{"pubmed":["40773376"],"doi":["10.1021/acs.nanolett.5c02309"]}}