<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Kluherz KT</submitter><funding>Basic Energy Sciences</funding><funding>National Renewable Energy Laboratory</funding><funding>Brookhaven National Laboratory</funding><pagination>30436-30446</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12371897</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>147(33)</volume><pubmed_abstract>The expression of metal lone-pair electrons is hypothesized to underpin many of the interesting properties of inorganic halide perovskite semiconductors. Recently, a stable low-temperature monoclinic polar phase was predicted for CsSnBr&lt;sub>3&lt;/sub> and CsSnI&lt;sub>3&lt;/sub>, opening the possibility of direct investigation of a ferroelectric distorted structure compared to the undistorted structure. To date, there have been no experimental reports of such a structure in CsSnI&lt;sub>3&lt;/sub>, and the low-temperature optical properties of CsSnI&lt;sub>3&lt;/sub> nanocrystals have remained unexplored. Here we report optical and structural evidence of a phase transition around 240 K in 8.9 nm CsSnI&lt;sub>3&lt;/sub> nanocrystals. Several changes in optical behavior occur below this transition point, including high-energy photoluminescence (PL) that emits concurrently with the exciton PL. The emergence of this high-energy PL is correlated with X-ray diffraction (XRD) and differential scanning calorimetry (DSC) supporting a phase transition from the orthorhombic structure between 240-200 K. Transient absorption measurements show an increase in the excited state lifetimes, i.e., slowed carrier cooling, at 200 K when photoexciting with photon energies above the high-energy state, consistent with slowed carrier cooling and emergence of high-energy PL. We hypothesize that the slowed carrier cooling is distinctive to this phase transition that modifies both the electronic and phonon structures that dictate excited-state carrier dynamics, and we discuss these changes.</pubmed_abstract><journal>Journal of the American Chemical Society</journal><pubmed_title>Dual Photoluminescence in Low-Temperature Phase of CsSnI&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt; Nanocrystals.</pubmed_title><pmcid>PMC12371897</pmcid><funding_grant_id>DE-SC0012704</funding_grant_id><funding_grant_id>DE-AC36-08GO28308</funding_grant_id><pubmed_authors>Weadock NJ</pubmed_authors><pubmed_authors>Sercel PC</pubmed_authors><pubmed_authors>Beard MC</pubmed_authors><pubmed_authors>Kluherz KT</pubmed_authors><pubmed_authors>Shelton JL</pubmed_authors><pubmed_authors>Leick N</pubmed_authors></additional><is_claimable>false</is_claimable><name>Dual Photoluminescence in Low-Temperature Phase of CsSnI&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt; Nanocrystals.</name><description>The expression of metal lone-pair electrons is hypothesized to underpin many of the interesting properties of inorganic halide perovskite semiconductors. Recently, a stable low-temperature monoclinic polar phase was predicted for CsSnBr&lt;sub>3&lt;/sub> and CsSnI&lt;sub>3&lt;/sub>, opening the possibility of direct investigation of a ferroelectric distorted structure compared to the undistorted structure. To date, there have been no experimental reports of such a structure in CsSnI&lt;sub>3&lt;/sub>, and the low-temperature optical properties of CsSnI&lt;sub>3&lt;/sub> nanocrystals have remained unexplored. Here we report optical and structural evidence of a phase transition around 240 K in 8.9 nm CsSnI&lt;sub>3&lt;/sub> nanocrystals. Several changes in optical behavior occur below this transition point, including high-energy photoluminescence (PL) that emits concurrently with the exciton PL. The emergence of this high-energy PL is correlated with X-ray diffraction (XRD) and differential scanning calorimetry (DSC) supporting a phase transition from the orthorhombic structure between 240-200 K. Transient absorption measurements show an increase in the excited state lifetimes, i.e., slowed carrier cooling, at 200 K when photoexciting with photon energies above the high-energy state, consistent with slowed carrier cooling and emergence of high-energy PL. We hypothesize that the slowed carrier cooling is distinctive to this phase transition that modifies both the electronic and phonon structures that dictate excited-state carrier dynamics, and we discuss these changes.</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Aug</publication><modification>2026-05-09T10:41:06.765Z</modification><creation>2026-04-08T00:48:33.954Z</creation></dates><accession>S-EPMC12371897</accession><cross_references><pubmed>40767961</pubmed><doi>10.1021/jacs.5c10595</doi></cross_references></HashMap>