{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Seo D"],"funding":["Korea Institute for Advancement of Technology","Ministry of Science and ICT, South Korea"],"pagination":["e01989"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12376588"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(31)"],"pubmed_abstract":["Vanadium oxide (VO<sub>x</sub>) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work demonstrates high-performance VO<sub>x</sub> memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VO<sub>x</sub> devices. The devices exhibit long retention, high endurance (≈10<sup>3</sup> cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X-band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front-ends with improved frequency agility in advanced communication systems."],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["VO&lt;sub&gt;x&lt;/sub&gt;-Based Non-Volatile Radio-Frequency Switches for Reconfigurable Filter."],"pmcid":["PMC12376588"],"funding_grant_id":["P0023703","RS-2024-00337000","RS‐2024‐00337000","IITP-2025-RS-2022-00156361","IITP‐2025‐RS‐2022‐00156361"],"pubmed_authors":["Seo D","Kim D","Lee S","Ryu J","Pyo C","Yoon TS","Kim M"],"additional_accession":[]},"is_claimable":false,"name":"VO&lt;sub&gt;x&lt;/sub&gt;-Based Non-Volatile Radio-Frequency Switches for Reconfigurable Filter.","description":"Vanadium oxide (VO<sub>x</sub>) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work demonstrates high-performance VO<sub>x</sub> memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VO<sub>x</sub> devices. The devices exhibit long retention, high endurance (≈10<sup>3</sup> cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X-band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front-ends with improved frequency agility in advanced communication systems.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Aug","modification":"2026-05-09T19:08:47.401Z","creation":"2026-04-08T01:10:23.81Z"},"accession":"S-EPMC12376588","cross_references":{"pubmed":["40432607"],"doi":["10.1002/advs.202501989"]}}