biostudies-literatureSeo DKorea Institute for Advancement of TechnologyMinistry of Science and ICT, South Koreae01989https://www.ebi.ac.uk/biostudies/studies/S-EPMC12376588biostudies-literatureUnknown12(31)Vanadium oxide (VO_x) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work demonstrates high-performance VO_x memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VO_x devices. The devices exhibit long retention, high endurance (≈10³ cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X-band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front-ends with improved frequency agility in advanced communication systems.Advanced science (Weinheim, Baden-Wurttemberg, Germany)VO&lt;sub&gt;x&lt;/sub&gt;-Based Non-Volatile Radio-Frequency Switches for Reconfigurable Filter.PMC12376588P0023703RS-2024-00337000RS‐2024‐00337000IITP-2025-RS-2022-00156361IITP‐2025‐RS‐2022‐00156361Seo DKim DLee SRyu JPyo CYoon TSKim MfalseVO&lt;sub&gt;x&lt;/sub&gt;-Based Non-Volatile Radio-Frequency Switches for Reconfigurable Filter.Vanadium oxide (VO_x) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work demonstrates high-performance VO_x memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VO_x devices. The devices exhibit long retention, high endurance (≈10³ cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X-band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front-ends with improved frequency agility in advanced communication systems.2025-01-01T00:00:00Z2025 Aug2026-05-09T19:08:47.401Z2026-04-08T01:10:23.81ZS-EPMC123765884043260710.1002/advs.202501989