<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>15(35)</volume><submitter>Al-Hamadani A</submitter><pubmed_abstract>Hybrid dielectric-metal nanogaps offer unique properties such as enhanced local density of optical states (LDOS) and simultaneously high quantum yield and coupling efficiency, with applications in bright single-photon sources, efficient nanoLEDs and imaging spectroscopy. In this work we report on silicon-gold hybrid nanogaps, considering both silicon nanorods on a gold film and gold nanorods on a silicon surface and compare them to their purely metallic and dielectric equivalent. To obtain the necessary nanometer-scale control, a combination of colloidal lithography, metal assisted chemical etching (MACE), and layer-by-layer polyelectrolyte approach were used to construct the nanogaps. Quantum emitters were incorporated in the nanogap in the form of a CdTe quantum dot monolayer. The efficient coupling between the quantum dot monolayer and the nanogap modes results in hybrid nanogaps outperforming their homogeneous counterpart, with the gold nanorod-silicon hybrid nanogap offering the largest emission rate enhancement factor of 51. Specifically, Purcell enhancements were increased by a factor of ∼2 for silicon nanorod-gold film and ∼1.5 for gold nanorod-silicon surface nanogaps compared to purely dielectric and metallic geometries respectively. These results, supported by FDTD simulations, highlight hybrid nanogaps as cornerstones for probing light-matter-interactions under extreme optical confinement with applications such as low cost and low power consumption ultrafast LEDs for short distance on-chip and chip-to-chip communications.</pubmed_abstract><journal>RSC advances</journal><pagination>29053-29062</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12377061</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Tuning the spontaneous emission of CdTe quantum dots with hybrid silicon-gold nanogaps.</pubmed_title><pmcid>PMC12377061</pmcid><pubmed_authors>Bartschmid T</pubmed_authors><pubmed_authors>Adawi AM</pubmed_authors><pubmed_authors>Al-Hamadani A</pubmed_authors><pubmed_authors>Al-Dulami A</pubmed_authors><pubmed_authors>Muravitskaya A</pubmed_authors><pubmed_authors>Bouillard JG</pubmed_authors><pubmed_authors>Menath J</pubmed_authors><pubmed_authors>Bourret GR</pubmed_authors><pubmed_authors>Vogel N</pubmed_authors></additional><is_claimable>false</is_claimable><name>Tuning the spontaneous emission of CdTe quantum dots with hybrid silicon-gold nanogaps.</name><description>Hybrid dielectric-metal nanogaps offer unique properties such as enhanced local density of optical states (LDOS) and simultaneously high quantum yield and coupling efficiency, with applications in bright single-photon sources, efficient nanoLEDs and imaging spectroscopy. In this work we report on silicon-gold hybrid nanogaps, considering both silicon nanorods on a gold film and gold nanorods on a silicon surface and compare them to their purely metallic and dielectric equivalent. To obtain the necessary nanometer-scale control, a combination of colloidal lithography, metal assisted chemical etching (MACE), and layer-by-layer polyelectrolyte approach were used to construct the nanogaps. Quantum emitters were incorporated in the nanogap in the form of a CdTe quantum dot monolayer. The efficient coupling between the quantum dot monolayer and the nanogap modes results in hybrid nanogaps outperforming their homogeneous counterpart, with the gold nanorod-silicon hybrid nanogap offering the largest emission rate enhancement factor of 51. Specifically, Purcell enhancements were increased by a factor of ∼2 for silicon nanorod-gold film and ∼1.5 for gold nanorod-silicon surface nanogaps compared to purely dielectric and metallic geometries respectively. These results, supported by FDTD simulations, highlight hybrid nanogaps as cornerstones for probing light-matter-interactions under extreme optical confinement with applications such as low cost and low power consumption ultrafast LEDs for short distance on-chip and chip-to-chip communications.</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Aug</publication><modification>2026-06-01T06:27:46.698Z</modification><creation>2026-04-08T09:54:20.363Z</creation></dates><accession>S-EPMC12377061</accession><cross_references><pubmed>40861991</pubmed><doi>10.1039/d5ra04583e</doi></cross_references></HashMap>